dated : 07/12/2002 semtech electronics ltd. ( subsidiary of sino-tech internatio nal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? st 2sc536 npn silicon epitaxial planar transistor for switching and af amplifier applications. the transistor is subdivided into four groups, o, y, g and l, according to its dc current gain. on special request, thes e transistors can be manufactured in different pin configurations. to-92 plastic package weight approx. 0.19g absolute maximum ratings (t a = 25 ) symbol value unit collector base voltage v cbo 40 v collector emitter voltage v ceo 30 v emitter base voltage v ebo 5 v collector current i c 100 ma base current i b 50 ma power dissipation p tot 400 mw junction temperature t j 125 o c storage temperature range t s -55 to +125 o c
dated : 07/12/2002 semtech electronics ltd. ( subsidiary of sino-tech internatio nal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? st 2sc536 characteristics at t amb =25 o c symbol min. typ. max. unit dc current gain at v ce =6v, i c =1ma current gain group at v ce =6v, i c =150ma o y g l h fe h fe h fe h fe h fe 70 120 200 350 25 - - - - 100 140 240 400 700 - - - - - - collector emitter saturation voltage at i c =50ma, i b =5ma v ce(sat) - - 0.5 v base emitter saturation voltage at i c =50ma, i b =5ma v be(sat) - - 1.2 v collector cutoff current at v cb =35v i cbo - - 0.1 a emitter cutoff current at v eb =5v i ebo - - 0.1 a transition frequency at v ce =10v, i e =1ma f t 100 - - mhz collector output capacitance at v cb =10v, f=1mhz c ob - 2 3.5 pf base intrinsic resistance at v cb =10v i c =1ma, f=30mhz rbb? - 50 - noise figure at v ce =6v, i c =0.1ma at f=1khz, r g =10k nf - 1 10 db
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